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Proceedings Paper

Study on EUV photomask resist stripping and cleaning
Author(s): Tsutomu Kikuchi; Yuji Nagashima; Haruka Nakano; Takahiko Wakatsuki; Kensuke Demura; Yoshiaki Kurokawa; Mikio Nonaka
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Paper Abstract

Any cleaning technology for state-of-the-art photo masks requires that pattern damage does not occur and optical characteristics do not change. Particularly with EUV masks, an important challenge is to suppress/prevent changes to the optical characteristics of ruthenium (Ru) film that generates when resist is removed (separated). This report illustrates a model explaining why optical characteristics change when conventional resist removal (separation) technologies are used on EUV mask. It also proposes a new resist removal technology that allows resist to be removed without any optical damage to Ru films.

Paper Details

Date Published: 13 October 2011
PDF: 6 pages
Proc. SPIE 8166, Photomask Technology 2011, 81662Q (13 October 2011); doi: 10.1117/12.899281
Show Author Affiliations
Tsutomu Kikuchi, Shibaura Mechatronics Corp. (Japan)
Yuji Nagashima, Shibaura Mechatronics Corp. (Japan)
Haruka Nakano, Shibaura Mechatronics Corp. (Japan)
Takahiko Wakatsuki, Shibaura Mechatronics Corp. (Japan)
Kensuke Demura, Shibaura Mechatronics Corp. (Japan)
Yoshiaki Kurokawa, Shibaura Mechatronics Corp. (Japan)
Mikio Nonaka, Shibaura Mechatronics Corp. (Japan)

Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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