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Proceedings Paper

Development status and infrastructure progress update of aerial imaging measurements on EUV masks
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Paper Abstract

The high volume device manufacturing infrastructure for the 22nm node and below based on EUVL technology requires defect-free EUV mask manufacturing as one of its foundations. The EUV Mask Infrastructure program (EMI) initiated by SEMATECH has identified an actinic measurement system for the printability analysis of EUV mask defects to ensure defect free mask manufacturing and cost-effective high-volume EUV production as an infrastructural prerequisite for the EUVL roadmap ([1], [2]). The Concept and Feasibility study for the AIMSTM EUV resulted in a feasible tool concept for 16nm defect printability review. The main development program for the AIMSTM EUV has been started at Carl Zeiss leading to a commercialized tool available in 2014. In this paper we will present the status of the progress of the design phase of this development and an infrastructure progress update of the EUV Mask defect printability review.

Paper Details

Date Published: 13 October 2011
PDF: 8 pages
Proc. SPIE 8166, Photomask Technology 2011, 816610 (13 October 2011); doi: 10.1117/12.899038
Show Author Affiliations
Sascha Perlitz, Carl Zeiss SMS GmbH (Germany)
Wolfgang Harnisch, Carl Zeiss SMS GmbH (Germany)
Ulrich Strößner, Carl Zeiss SMS GmbH (Germany)
Jan Hendrik Peters, Carl Zeiss SMS GmbH (Germany)
Markus Weiss, Carl Zeiss SMT GmbH (Germany)
Dirk Hellweg, Carl Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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