Share Email Print

Proceedings Paper

EBM-8000: EB mask writer for product mask fabrication of 22nm half-pitch generation and beyond
Author(s): Shusuke Yoshitake; Takashi Kamikubo; Noriaki Nakayamada; Kiyoshi Hattori; Hiroyoshi Ando; Tomohiro Iijima; Kenji Ohtoshi; Kenichi Saito; Ryoichi Yoshikawa; Shuichi Tamamushi; Rikio Tomiyoshi; Hitoshi Higurashi; Yoshiaki Hattori; Seiichi Tsuchiya; Masayuki Katoh; Kouichi Suzuki; Yuichi Tachikawa; Munehiro Ogasawara; Victor Katsap; Steven Golladay; Rodney Kendall
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Many lithography candidates, such as ArF immersion lithography with double-patterning/double-exposure techniques, EUV lithography and nano-imprint lithography, show promising capability for 22-nm half-pitch generation lithography. ArF immersion lithography with double-patterning/double-exposure techniques remains the leading choice as other techniques still lack the conclusive evidence as the practical solution for actual production. Each of the prospective lithography techniques at 22-nm half-pitch generation requires masks with improved accuracy and increased complexity. We have developed a new electron beam mask writer, EBM-8000, as the tool for mask production of 22-nm half-pitch generation and for mask development of 16nm half-pitch generation, which is necessary for the practical application of these promising lithography technologies. The development of EBM-8000 was focused on increasing throughput and improving beam positioning accuracy. Three new major features of the tool are: new electron gun with higher brightness to achieve current density of 400 A/cm2, high speed DAC amplifier to accurately position the beam with shorter settling time, and additional temperature control to reduce the beam drift. The improved image placement accuracy and repeatability, and higher throughput of EBM-8000 have been confirmed by actual writing tests with our in-house tool.

Paper Details

Date Published: 13 October 2011
PDF: 8 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661D (13 October 2011); doi: 10.1117/12.898850
Show Author Affiliations
Shusuke Yoshitake, NuFlare Technology, Inc. (Japan)
Takashi Kamikubo, NuFlare Technology, Inc. (Japan)
Noriaki Nakayamada, NuFlare Technology, Inc. (Japan)
Kiyoshi Hattori, NuFlare Technology, Inc. (Japan)
Hiroyoshi Ando, NuFlare Technology, Inc. (Japan)
Tomohiro Iijima, NuFlare Technology, Inc. (Japan)
Kenji Ohtoshi, NuFlare Technology, Inc. (Japan)
Kenichi Saito, NuFlare Technology, Inc. (Japan)
Ryoichi Yoshikawa, NuFlare Technology, Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology, Inc. (Japan)
Rikio Tomiyoshi, NuFlare Technology, Inc. (Japan)
Hitoshi Higurashi, NuFlare Technology, Inc. (Japan)
Yoshiaki Hattori, NuFlare Technology, Inc. (Japan)
Seiichi Tsuchiya, NuFlare Technology, Inc. (Japan)
Masayuki Katoh, NuFlare Technology, Inc. (Japan)
Kouichi Suzuki, NuFlare Technology, Inc. (Japan)
Yuichi Tachikawa, NuFlare Technology, Inc. (Japan)
Munehiro Ogasawara, NuFlare Technology, Inc. (Japan)
Victor Katsap, NuFlare Technology, Inc. (United States)
Steven Golladay, NuFlare Technology, Inc. (United States)
Rodney Kendall, NuFlare Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?