We have been developing nanoimprint templates for the next-generation sub-20nm nanofabrication technology, with particular emphasis on duplicate fabrication of quartz templates created from Si masters. In general, the narrowing of pattern line widths is accompanied by concerns about whether resist will sufficiently fill such lines. Our development has concentrated on the filling property of resist in narrow lines and on pattern shape after release from the mold. Our findings indicated that pattern formability differs according to the type of resist monomer. We inferred that these differences are manifested in such behaviors as resist shrinkage after or during release of the mold. Using a novel resist that has good formability, we pursued quartz template duplication that employs UV-NIL. As a result, we demonstrated HP20nm quartz pattern formation using the duplication process. We were also verified NIL resist pattern resolution of HP17.5nm.

Date Published: 13 October 2011
PDF: 6 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661V (13 October 2011); doi: 10.1117/12.896504

Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)