Proceedings Paper
Nanowire based heterostructures: fundamental properties and applications| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized
with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial
epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization
of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device
performance are obtained by numerical simulation and discussed.
Paper Details
Date Published: 16 September 2011
PDF: 15 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 810603 (16 September 2011); doi: 10.1117/12.896471
Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)
PDF: 15 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 810603 (16 September 2011); doi: 10.1117/12.896471
Show Author Affiliations
Martin Heiss, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Carlo Colombo, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Carlo Colombo, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Anna Fontcuberta i Morral, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)
© SPIE. Terms of Use
