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Proceedings Paper

Self-recovered InGaAs single photon avalanche detector with patterned Zn-diffused structure
Author(s): James Cheng; Yu-Hwa Lo
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Paper Abstract

In conventional InGaAs/InP single photon avalanche detectors, zinc diffusion is used to define the multiplication junction to reduce the dark count and maximize the detection efficiency. The device performance is very sensitive to process variations, and the diffusion process must be carefully calibrated and analyzed to minimize any edge breakdown effects. Here we present a much simpler design utilizing patterned zinc diffusion rings. The processing is simplified - a single diffusion compared to two diffusions in a conventional device; and the device performance is not as critical to the processing variations. The diffusion is performed on a self-quenching self-recovering epitaxial structure, resulting in free-running single photon detection efficiencies of 20% at 140 K, with a dark count rate of 8 kHz for a 22μm diameter device.

Paper Details

Date Published: 16 September 2011
PDF: 6 pages
Proc. SPIE 8154, Infrared Remote Sensing and Instrumentation XIX, 81540H (16 September 2011); doi: 10.1117/12.895272
Show Author Affiliations
James Cheng, Univ. of California, San Diego (United States)
Yu-Hwa Lo, Univ. of California, San Diego (United States)

Published in SPIE Proceedings Vol. 8154:
Infrared Remote Sensing and Instrumentation XIX
Marija Strojnik; Gonzalo Paez, Editor(s)

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