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Proceedings Paper

All-printed CNT transistors with high on-off ratio and bias-invariant transconductance
Author(s): Guiru Gu; Yunfeng Ling; Runyu Liu; Puminun Vasinajindakaw; Xuejun Lu; Carissa S. Jones; Wu-Sheng Shih; Vijaya Kayastha; Nick L. Downing; Urs Berger; Mike Renn
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Paper Abstract

We report an all-printed flexible carbon nanotube (CNT) thin-film transistor (TFT). All the CNT TFT components, including the source and drain electrodes, the TFT transport channel, and the gate electrode, are printed on a flexible substrate at room temperature. A high ON/OFF ratio of over 103 was achieved. The all printed CNT-TFT also exhibits bias-invariant transconductance over a certain gate bias range. This all-printed process avoids the conventional procedures in lithography, vacuum, and metallization, and offers a promising technology for low-cost, high-throughput fabrication of large-area flexible electronics on a variety of substrates, including glass, Si, indium tin oxide and plastics.

Paper Details

Date Published: 19 September 2011
PDF: 7 pages
Proc. SPIE 8101, Carbon Nanotubes, Graphene, and Associated Devices IV, 81010B (19 September 2011); doi: 10.1117/12.894472
Show Author Affiliations
Guiru Gu, Univ. of Massachusetts Lowell (United States)
Yunfeng Ling, Univ. of Massachusetts Lowell (United States)
Runyu Liu, Univ. of Massachusetts Lowell (United States)
Puminun Vasinajindakaw, Univ. of Massachusetts Lowell (United States)
Xuejun Lu, Univ. of Massachusetts Lowell (United States)
Carissa S. Jones, Brewer Science, Inc. (United States)
Wu-Sheng Shih, Brewer Science, Inc. (United States)
Vijaya Kayastha, Brewer Science, Inc. (United States)
Nick L. Downing, Brewer Science, Inc. (United States)
Urs Berger, Optomec, Inc. (United States)
Mike Renn, Optomec, Inc. (United States)

Published in SPIE Proceedings Vol. 8101:
Carbon Nanotubes, Graphene, and Associated Devices IV
Didier Pribat; Young-Hee Lee; Manijeh Razeghi, Editor(s)

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