The SiO_x/Si quantum wells (QWs) structures were fabricated by using the successive deposition technique, as quantum confinement device to increase the effective energy bandgap and passivation effect in Si surface for the third generation solar cell applications. In Si/SiO_x QWs, the thicknesses of Si layers and SiOx layers were varied between 1 to 5 nm, respectively. The roughness of sputter-deposited Si on SiO_x was less than 4 Å in the thickness of 2 nm. By using the SiO_x/Si QW structures on Si surfaces, the lifetime measured by u-PCD technique increased as a result of passivated surface effects. The tunneling phenomena and good interface properties were observed in the fabricated QWs structures.

Date Published: 22 September 2011
PDF: 7 pages
Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81111D (22 September 2011); doi: 10.1117/12.894447

Published in SPIE Proceedings Vol. 8111:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
Loucas Tsakalakos, Editor(s)