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Proceedings Paper

Second and third harmonic generation at UV and soft x-ray wavelengths from semiconductor gratings
Author(s): M. A. Vincenti; D. de Ceglia; M. Scalora
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Paper Abstract

Extraordinary transmission properties are demonstrated in the UV range for GaAs gratings with sub-wavelength apertures under TM-polarization excitation. The metal-like response below 270nm, typical of several semiconductors such as GaAs or GaP, in fact may be used to excite surface waves that lead to enhance transmission in the linear regime and for novel nonlinear optical phenomena in the UV and soft X-ray ranges. An investigation of the linear transmission as a function of geometrical parameters of the grating reveals the formation of surface waves and relatively high transmission values even in regimes where the nominal absorption is significant. Strong field localization in subwavelength cavities and on the surface of the grating can be achieved under proper excitation conditions leading to the enhancement of harmonic generation. Nonlinear contributions to harmonic generation arise from symmetry breaking, the nonlinear magnetic Lorentz force, and from intrinsic, dipolar volume contributions. Preliminary results show promising nonlinear conversion efficiencies at wavelengths below 100nm, and demonstrate cross-coupling of TE and TM polarizations for pump and harmonic signals. A down-conversion process that can re-generate pump photons of polarization orthogonal compared to the incident pump field is also demonstrated.

Paper Details

Date Published: 9 September 2011
PDF: 6 pages
Proc. SPIE 8093, Metamaterials: Fundamentals and Applications IV, 80932C (9 September 2011); doi: 10.1117/12.893686
Show Author Affiliations
M. A. Vincenti, The AEgis Technologies Group, Inc. (United States)
D. de Ceglia, The AEgis Technologies Group, Inc. (United States)
M. Scalora, U.S. Army Aviation and Missile Command (United States)

Published in SPIE Proceedings Vol. 8093:
Metamaterials: Fundamentals and Applications IV
Allan D. Boardman; Nader Engheta; Mikhail A. Noginov; Nikolay I. Zheludev, Editor(s)

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