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Proceedings Paper

Simulation of spin MOSFETs
Author(s): Arunanshu M. Roy; Dmitri E. Nikonov; Krishna C. Saraswat
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Paper Abstract

The development of spin MOSFETs has been stymied by low values of magnetoresistance (MR) measured in experiments. Simulation studies have largely focused on diffusion driven or ballistic transport in the semiconductor and a simplistic treatment of spin injecting contacts. Here we demonstrate a novel framework to simulate spin injection and spin transport in semiconductors in the drift-diffusion regime and a tunneling based model for spin injecting contacts thereby enabling simulation and optimization of experimental devices.

Paper Details

Date Published: 15 September 2011
PDF: 6 pages
Proc. SPIE 8100, Spintronics IV, 81001J (15 September 2011); doi: 10.1117/12.893171
Show Author Affiliations
Arunanshu M. Roy, Stanford Univ. (United States)
Dmitri E. Nikonov, Intel Corp. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 8100:
Spintronics IV
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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