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Proceedings Paper

Investigation of two-center recording with variable sensitizing light intensity in doubly-doped LiNbO3 crystal
Author(s): Zhifang Chai; Ya'nan Zhi; Qiang Zhao; Liren Liu
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Paper Abstract

The effect of variable sensitizing intensity on photorefractive performance in two-center recording is investigated through jointly solving two-center material equations and the coupled-wave equations. Four kinds of schemes for varying sensitizing intensity are designed, the relationship between the sensitizing intensity and recording time is simply assumed to be linear, and at the same time the recording intensity is stable in recording process. The temporal evolution of the space charge field (SCF) is obtained in each scheme. The results show that SCF increase monotonously no more in the recording process. The increase of sensitizing intensity will reduce the peak value of SCF during recording process. However, the decay of sensitizing intensity can enhance the peak value of SCF. The slow decay of sensitizing intensity is also useful to the buildup of high SCF, but the recording time will be long. At last, the effect of the decay mode and the initial value of sensitizing intensity on recording process are discussed. Both of recording sensitivity and the peak value of SCF can be enhanced in decay scheme with the high initial sensitizing intensity. In a real application an appropriate sensitizing light scheme needs to be designed.

Paper Details

Date Published: 7 September 2011
PDF: 8 pages
Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 812014 (7 September 2011); doi: 10.1117/12.892910
Show Author Affiliations
Zhifang Chai, East China Normal Univ. (China)
Ya'nan Zhi, Shanghai Institute of Optics and Fine Mechanics (China)
Qiang Zhao, East China Normal Univ. (China)
Liren Liu, Shanghai Institute of Optics and Fine Mechanics (China)

Published in SPIE Proceedings Vol. 8120:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V
Shizhuo Yin; Ruyan Guo, Editor(s)

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