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Proceedings Paper

Optical spin orientation in SiGe heterostructures
Author(s): Giovanni Isella; Federico Bottegoni; Fabio Pezzoli; Stefano Cecchi; Eleonora Gatti; Daniel Chrastina; Emanuele Grilli; Mario Guzzi; Franco Ciccacci
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Paper Abstract

We present photoluminescence (PL) and spin polarized photo-emission (SPPE) measurements performed on bulk Ge, and Ge/Si(100) epilayers. A set of bi-axially strained Ge epilayers featuring different strain levels has been deposited by low energy plasma enhanced CVD (LEPECVD) and characterized by high resolution X-ray diffraction (HR-XRD). SPPE data indicate that compressive strain effectively lifts the heavy holes - light holes degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material. Circularly polarized light PL measurements performed on p-type bulk crystals confirm the suitability of Ge for spintronics application showing a robust electron spin inizialization at the direct gap of Ge and giving a lower bound value for the spin relaxation time of ≈ 230 fs.

Paper Details

Date Published: 15 September 2011
PDF: 7 pages
Proc. SPIE 8100, Spintronics IV, 810007 (15 September 2011); doi: 10.1117/12.892749
Show Author Affiliations
Giovanni Isella, Politecnico di Milano (Italy)
Federico Bottegoni, Politecnico di Milano (Italy)
Fabio Pezzoli, Univ. degli Studi di Milano-Bicocca (Italy)
Stefano Cecchi, Politecnico di Milano (Italy)
Eleonora Gatti, Univ. degli Studi di Milano-Bicocca (Italy)
Daniel Chrastina, Politecnico di Milano (Italy)
Emanuele Grilli, Univ. degli Studi di Milano-Bicocca (Italy)
Mario Guzzi, Univ. degli Studi di Milano-Bicocca (Italy)
Franco Ciccacci, Politecnico di Milano (Italy)


Published in SPIE Proceedings Vol. 8100:
Spintronics IV
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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