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Proceedings Paper

Optical and electrical properties of crystalline silicon wire arrays
Author(s): Yu-Pan Pai; Brian Simonds; Jeremy Fields; Reuben Collins; P. Craig Taylor
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Paper Abstract

Silicon wire arrays have been synthesized through a two-step metal-assisted electrode-less etching from an n-type silicon wafer with (100) orientation. Field Emission Scanning Electron microscope (FESEM), Ultra violet-Visible-Near infrared (UV-VIS-NIR) spectrophotometer and Resonance-coupled photoconductivity decay (RCPCD) have been used to characterize the morphological, optical, and electrical properties of Si wires at varying etching times. The reflectivity of the wire arrays decreased with increasing etching time because of light scattering from the micro-roughness of the Silicon wire surfaces. The effective carrier lifetime decreased with increasing wire length due to the increased surface area. We also created smoother wire surfaces by thermal oxidation followed by HF dipping. From FESEM cross sectional images and reflectivity results, this treatment removes the micro-roughness, but the effective lifetime is lower than the as-grown wire arrays. A photoluminescence peak observed only in the smoother wires suggests that the lower effective lifetime is due to the diffusion of residual Ag atoms from the wire surfaces into the bulk during the thermal oxidation process.

Paper Details

Date Published: 20 September 2011
PDF: 8 pages
Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81110Z (20 September 2011); doi: 10.1117/12.892553
Show Author Affiliations
Yu-Pan Pai, Colorado School of Mines (United States)
Brian Simonds, Colorado School of Mines (United States)
Jeremy Fields, Colorado School of Mines (United States)
Reuben Collins, Colorado School of Mines (United States)
P. Craig Taylor, Colorado School of Mines (United States)

Published in SPIE Proceedings Vol. 8111:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
Loucas Tsakalakos, Editor(s)

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