Share Email Print

Proceedings Paper

Inelastic light scattering of hole spin excitations in p-modulation-doped GaAs-AlGaAs single quantum wells
Author(s): Michael Hirmer; Marika Hirmer; Tobias Korn; Dieter Schuh; Werner Wegscheider; Roland Winkler; Christian Schüller
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We have investigated spin-density excitations of holes in one-sided p-modulation-doped GaAs-AlGaAs single quantum wells by means of resonant inelastic light scattering. The experiments yield a direct measure of the Rashba spin splitting of holes in quantum wells with an asymmetric potential profile. In the low-energy range of the inelastic light scattering spectra, we observe in all samples well-defined excitations with energies between about 1 meV and 4 meV, which can be attributed to spin-density excitations of the two-dimensional hole systems due to polarization selection rules. We interpret the excitations as spin-density excitations, where holes are excited between the Rashba spin-split ground states, performing a spinflip process. Comparison to k · p bandstructure calculations shows good agreement of the measured and calculated wave-vector-dependent spin splittings. Details of the spectra show a distinct dependence on the directions of light polarizations with respect to crystallographic axes. In particular, we have detected a doublet structure of the hole spin excitations, which might be attributed to the anisotropic spin-split hole dispersion within the quantum-well plane.

Paper Details

Date Published: 15 September 2011
PDF: 8 pages
Proc. SPIE 8100, Spintronics IV, 81000N (15 September 2011);
Show Author Affiliations
Michael Hirmer, Univ. Regensburg (Germany)
Marika Hirmer, Univ. Regensburg (Germany)
Tobias Korn, Univ. Regensburg (Germany)
Dieter Schuh, Univ. Regensburg (Germany)
Werner Wegscheider, ETH Zürich (Switzerland)
Roland Winkler, Northern Illinois Univ. (United States)
Christian Schüller, Univ. Regensburg (Germany)

Published in SPIE Proceedings Vol. 8100:
Spintronics IV
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?