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Proceedings Paper

Photo-induced electron transfer reactions at semiconductor quantum dot interfaces
Author(s): Aisea Veamatahau; Jiang Bo; Satoshi Makuta; Khor Chong Yaw; Masayuki Kanehara; Toshiharu Teranishi; Yasuhiro Tachibana
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Paper Abstract

Cadmium sulfide (CdS) quantum dots with a series of electron donor and acceptors were employed to investigate thermodynamic and kinetic influences on photo-induced electron transfer reactions at CdS surface. Although the potential energy levels of all electron donor and acceptors are located within the QD band gap, the QD photoluminescence (PL) behavior is dependent upon the type of quencher. PL decreased into half, when one methyl viologen or benzyl viologen molecule per one QD was added into the QD solution, implying that the molecule attaches to the QD surface. In contrast, the dynamic quenching behavior was observed when thionine or o-tolidine was employed as a quencher. PL quenching efficiency decreased, when the distance between the QD surface and the quencher was increased by capping the QD with butylamine. Therefore, the PL quenching is mainly controlled kinetically rather than thermodynamically.

Paper Details

Date Published: 19 September 2011
PDF: 7 pages
Proc. SPIE 8109, Solar Hydrogen and Nanotechnology VI, 81090N (19 September 2011); doi: 10.1117/12.892428
Show Author Affiliations
Aisea Veamatahau, RMIT Univ. (Australia)
Jiang Bo, RMIT Univ. (Australia)
Satoshi Makuta, RMIT Univ. (Australia)
Khor Chong Yaw, RMIT Univ. (Australia)
Masayuki Kanehara, Univ. of Tsukuba (Japan)
Toshiharu Teranishi, Univ. of Tsukuba (Japan)
Yasuhiro Tachibana, RMIT Univ. (Australia)
Osaka Univ. (Japan)
Japan Science and Technology Agency (Japan)

Published in SPIE Proceedings Vol. 8109:
Solar Hydrogen and Nanotechnology VI
Yasuhiro Tachibana, Editor(s)

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