Proceedings Paper
Amplification of light in InxGa1-xN/GaN semiconductor quantum dot without high intensity control fields| Format | Member Price | Non-Member Price |
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Paper Abstract
This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without
inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and
their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger-
Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The
principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and
investigated the lasing without inversion (LWI) phenomenon in this quantum dot.
Paper Details
Date Published: 4 March 2011
PDF: 10 pages
Proc. SPIE 7998, International Conference on Laser Physics 2010, 79981J (4 March 2011); doi: 10.1117/12.891261
Published in SPIE Proceedings Vol. 7998:
International Conference on Laser Physics 2010
Aram V. Papoyan, Editor(s)
PDF: 10 pages
Proc. SPIE 7998, International Conference on Laser Physics 2010, 79981J (4 March 2011); doi: 10.1117/12.891261
Show Author Affiliations
A. Soltany, Univ. of Tabriz (Iran, Islamic Republic of)
A. Hajibadali, Azad Univ. of Tabriz (Iran, Islamic Republic of)
A. Soltani, Univ. of Birjand (Iran, Islamic Republic of)
A. Hajibadali, Azad Univ. of Tabriz (Iran, Islamic Republic of)
A. Soltani, Univ. of Birjand (Iran, Islamic Republic of)
H. Noshad, Univ. of Tabriz (Iran, Islamic Republic of)
H. Asadpour, Univ. of Tabriz (Iran, Islamic Republic of)
H. Asadpour, Univ. of Tabriz (Iran, Islamic Republic of)
Published in SPIE Proceedings Vol. 7998:
International Conference on Laser Physics 2010
Aram V. Papoyan, Editor(s)
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