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Proceedings Paper

Electrical properties of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods
Author(s): Zhosef R. Panosyan; Serjik S. Voskanyan; Yerem V. Yengibaryan; Karapet E. Avjyan; Ashot M. Khachatryan; Lenrik A. Matevosyan
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Paper Abstract

Electrical characteristics of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and pulsed laser deposition methods were investigated. The mechanisms of carrier flow across the fabricated junctions were analyzed. Keywords: ion-assisted plasma-enhanced deposition, pulsed laser deposition, DLC- (n, p)-Si heterojunctions, currentvoltage & capacitance- voltage characteristics.

Paper Details

Date Published: 4 March 2011
PDF: 7 pages
Proc. SPIE 7998, International Conference on Laser Physics 2010, 799813 (4 March 2011); doi: 10.1117/12.890858
Show Author Affiliations
Zhosef R. Panosyan, SEUA (Armenia)
Serjik S. Voskanyan, SEUA (Armenia)
Yerem V. Yengibaryan, SEUA (Armenia)
Karapet E. Avjyan, IRPHE (Armenia)
Ashot M. Khachatryan, IRPHE (Armenia)
Lenrik A. Matevosyan, IRPHE (Armenia)


Published in SPIE Proceedings Vol. 7998:
International Conference on Laser Physics 2010
Aram V. Papoyan, Editor(s)

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