It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band-tailing, localised states or conduction band edge fluctuations. In this paper we develop a model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications.

Date Published: 7 January 2011
PDF: 6 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870E (7 January 2011); doi: 10.1117/12.889950

Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)