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Proceedings Paper

Rigorous simulations of 3D patterns on extreme ultraviolet lithography masks
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Paper Abstract

Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings.

Paper Details

Date Published: 23 May 2011
PDF: 11 pages
Proc. SPIE 8083, Modeling Aspects in Optical Metrology III, 80831B (23 May 2011); doi: 10.1117/12.889831
Show Author Affiliations
Sven Burger, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Lin Zschiedrich, JCMwave GmbH (Germany)
Jan Pomplun, JCMwave GmbH (Germany)
Frank Schmidt, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)

Published in SPIE Proceedings Vol. 8083:
Modeling Aspects in Optical Metrology III
Bernd Bodermann, Editor(s)

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