
Proceedings Paper
Graphene optoelectronics based on antidot superlatticesFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
Graphene is well known for its outstanding electronic, thermal, and mechanical properties, and has recently gained
tremendous interest as a nanomaterial for optoelectronic devices. We review our recent efforts on exfoliated graphene
with a particular focus on the influence of graphene's chiral edges on the electronic and optical properties. We first
show that Raman spectroscopy can not only be used for layer metrology but also to monitor the composition of
graphene's zigzag/armchair edges. To elucidate the role of the localized edge state density, we fabricated dye
sensitized antidot superlattices, i.e. nanopatterned graphene. The fluorescence from deposited dye molecules was
found to quench strongly as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned
but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field of
up to 260 mV accounting for p-type doping as well as fluorescence quenching due to dissociation of electron-hole
pairs from attached dye molecules. Our study provides new insights into the interplay of localized edge states in
antidot superlattices and the resulting band bending, which are critical properties to enable novel applications of
nanostructured graphene for light harvesting and photovoltaic devices.
Paper Details
Date Published: 13 May 2011
PDF: 11 pages
Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310Y (13 May 2011); doi: 10.1117/12.889114
Published in SPIE Proceedings Vol. 8031:
Micro- and Nanotechnology Sensors, Systems, and Applications III
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)
PDF: 11 pages
Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310Y (13 May 2011); doi: 10.1117/12.889114
Show Author Affiliations
Stefan Strauf, Stevens Institute of Technology (United States)
Eui-Hyeok Yang, Stevens Institute of Technology (United States)
Published in SPIE Proceedings Vol. 8031:
Micro- and Nanotechnology Sensors, Systems, and Applications III
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)
© SPIE. Terms of Use
