
Proceedings Paper
Advances of AlGaN-based high-efficiency deep-UV LEDsFormat | Member Price | Non-Member Price |
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Paper Abstract
We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs)
with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on
sapphire. High internal quantum efficiency (IQE) of 50-80% was observed from AlGaN or quaternary InAlGaN MQWs
by fabricating them on low TDD AlN templates. Also, an electron injection efficiency (EIE) was markedly improved by
using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256-275 nm LEDs, which will be
useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247
and 270 nm AlGaN-LEDs, respectively.
Paper Details
Date Published: 7 January 2011
PDF: 10 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870G (7 January 2011); doi: 10.1117/12.888927
Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)
PDF: 10 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870G (7 January 2011); doi: 10.1117/12.888927
Show Author Affiliations
Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)
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