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Proceedings Paper

Third order silicon (Si) nitride side-walled grating using silicon-on- insulatir (SOI)
Author(s): C. E. Png; S. T. Lim; E. P. Li; A. J. Danner
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Paper Abstract

In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half- maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.

Paper Details

Date Published: 19 January 2011
PDF: 7 pages
Proc. SPIE 7986, Passive Components and Fiber-Based Devices VII, 79860I (19 January 2011); doi: 10.1117/12.888579
Show Author Affiliations
C. E. Png, A*STAR (Singapore)
S. T. Lim, A*STAR (Singapore)
E. P. Li, A*STAR (Singapore)
A. J. Danner, A*STAR (Singapore)
National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 7986:
Passive Components and Fiber-Based Devices VII
Perry P. Shum, Editor(s)

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