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Proceedings Paper

The growth of Si overlayers on Er2O3(111)/Si(111) by solid phase epitaxy
Author(s): Run Xu; Jiaming Xie; Minyan Tang; Yanyan Zhu; Lin-jun Wang
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Paper Abstract

The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er2O3 (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er2O3 on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952E (18 February 2011); doi: 10.1117/12.888362
Show Author Affiliations
Run Xu, Shanghai Univ. (China)
Jiaming Xie, Shanghai Univ. (China)
Minyan Tang, Shanghai Univ. (China)
Yanyan Zhu, Shanghai Univ. of Electric Power (China)
Lin-jun Wang, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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