Proceedings Paper
The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network| Format | Member Price | Non-Member Price |
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Paper Abstract
The strain field and elastic energy due to interfacial misfit dislocation networks near the free surface
have been calculated analytically. The result predicted the preferential nucleation sites of
self-assembled quantum dots with the influence of dislocation networks. Compared with Green
function method, our solution is simple, direct and can solve the problem completely.
Paper Details
Date Published: 7 January 2011
PDF: 7 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870C (7 January 2011); doi: 10.1117/12.888354
Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)
PDF: 7 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870C (7 January 2011); doi: 10.1117/12.888354
Show Author Affiliations
Shuai Zhou, Beijing Univ. of Posts and Telecommunications (China)
Yumin Liu, Beijing Univ. of Posts and Telecommunications (China)
Yumin Liu, Beijing Univ. of Posts and Telecommunications (China)
Zhongyuan Yu, Beijing Univ. of Posts and Telecommunications (China)
Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)
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