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Proceedings Paper

Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy
Author(s): K. Yasuda; M. Niraula; Y. Agata
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Paper Abstract

We present a summary of our work towards developing spectroscopic and nuclear imaging detectors using epitaxially grown thick single crystal CdTe layers on Si substrates. High crystalline quality thick single crystal CdTe layers (>260 μm) were obtained where the growth rates could be varied from 10-70 μm/h by adjusting the precursor's flow rates, ratios and the substrate temperatures. Both high resistivity p-like CdTe layers and highly conductive n+-CdTe layers with controlled electrical properties were obtained using iodine as a dopant, but using different growth conditions. Detectors were fabricated in a p-CdTe/n+-CdTe/n+-Si heterojunction diode structure, which demonstrated their energy discrimination capability by resolving energy peaks from a gamma source. Details on the growth characteristics and the fabrication process for a 2-D imaging array are presented.

Paper Details

Date Published: 18 February 2011
PDF: 6 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952T (18 February 2011); doi: 10.1117/12.888229
Show Author Affiliations
K. Yasuda, Nagoya Institute of Technology (Japan)
M. Niraula, Nagoya Institute of Technology (Japan)
Y. Agata, Nagoya Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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