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Proceedings Paper

Contact resistance in organic transistors with different structures
Author(s): Jiaxing Hu; Lianbin Niu; Rongli Guo; Baoyuan Liu
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Paper Abstract

It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.

Paper Details

Date Published: 18 February 2011
PDF: 8 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950D (18 February 2011); doi: 10.1117/12.888227
Show Author Affiliations
Jiaxing Hu, Xi'an Technological Univ. (China)
Lianbin Niu, Chongqing Normal Univ. (China)
Rongli Guo, Xi'an Technological Univ. (China)
Baoyuan Liu, Xi'an Technological Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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