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Proceedings Paper

Influence of ion-doping on the photoelectric properties of mesoporous ZnO thin films
Author(s): Linyu Li; Yue Shen; Qishuang Wu; Meng Cao; Feng Gu; Jiancheng Zhang
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Paper Abstract

Sn, Al, Y-doped mesoporous ZnO(doping with 5 at.%) thin films (M-ZnO-5%X, X= (Sn, Al, Y))with regular mesoporous structures were successfully prepared through sol-gel and spin-coating methods, as evidenced from small angle X-ray diffraction (SAXRD) and scanning electron microscopy (SEM). The diameter/d value is about 8 nm calculated by Bragg equation. Influences of ion-doping on the photoluminescence spectra of mesoporous ZnO thin films were investigated. The energy gaps of Y, Al, Sn-doped mesoporous ZnO increase from 3.0 eV (the energy gap of undoped ZnO thin film) to 3.05, 3.08 and 3.15 eV, respectively. Dye-sensitized solar cells (DSSCs) based on Sn, Al, Y-doped ZnO photoelectrodes were structured and the properties of the cells were studied. Compared with undoped ZnO film, M-ZnO-5%Sn film showed higher solar-to-electric conversion efficiency, which may come from the broader absorbance.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950M (18 February 2011); doi: 10.1117/12.888217
Show Author Affiliations
Linyu Li, Shanghai Univ. (China)
Yue Shen, Shanghai Univ. (China)
Qishuang Wu, Shanghai Univ. (China)
Meng Cao, Shanghai Univ. (China)
Feng Gu, Shanghai Univ. (China)
Jiancheng Zhang, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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