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Proceedings Paper

InP lateral overgrowth technology for silicon photonics
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Paper Abstract

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

Paper Details

Date Published: 7 January 2011
PDF: 6 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 798706 (7 January 2011); doi: 10.1117/12.887973
Show Author Affiliations
Zhechao Wang, Royal Institute of Technology (Sweden)
JORCEP (Sweden)
Carl Junesand, Royal Institute of Technology (Sweden)
Wondwosen Metaferia, Royal Institute of Technology (Sweden)
Chen Hu, Royal Institute of Technology (Sweden)
Sebastian Lourdudoss, Royal Institute of Technology (Sweden)
Lech Wosinski, Royal Institute of Technology (Sweden)
JORCEP (Sweden)

Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)

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