Proceedings Paper
Frequency-agile terahertz-wave sources and applications to sensitive diagnosis of semiconductor wafers| Format | Member Price | Non-Member Price |
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Paper Abstract
We have developed ultra-widely tunable THz-wave source using organic nonlinear optical crystals such as 4-
dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) and N-benzyl-2-methyl-4-nitroaniline (BNA). The THz-wave
difference frequency generation using these crystals covers the ultra-widely tunable range of 0.1-40 THz with frequency
agility. Collaborating with Furukawa Co. Ltd., we used the progressive, frequency-agile THz-wave source for industrial
applications and produced a sensitive, non-destructive method for examining carrier-density and electrical properties of
semiconductors. This method presents novel possibilities for use in the semiconductor industry.
Paper Details
Date Published: 25 May 2011
PDF: 6 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230I (25 May 2011); doi: 10.1117/12.887941
Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)
PDF: 6 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230I (25 May 2011); doi: 10.1117/12.887941
Show Author Affiliations
Hiroaki Minamide, RIKEN (Japan)
Hiromasa Ito, RIKEN (Japan)
Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)
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