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Proceedings Paper

MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response
Author(s): Daniel R. Schuette; Richard C. Westhoff; Joseph S. Ciampi; Gayatri E. Perlin; Douglas J. Young; Brian F. Aull; Robert K. Reich; David C. Shaver
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Paper Abstract

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.

Paper Details

Date Published: 12 May 2011
PDF: 9 pages
Proc. SPIE 8033, Advanced Photon Counting Techniques V, 80330D (12 May 2011); doi: 10.1117/12.887736
Show Author Affiliations
Daniel R. Schuette, MIT Lincoln Lab. (United States)
Richard C. Westhoff, MIT Lincoln Lab. (United States)
Joseph S. Ciampi, MIT Lincoln Lab. (United States)
Gayatri E. Perlin, MIT Lincoln Lab. (United States)
Douglas J. Young, MIT Lincoln Lab. (United States)
Brian F. Aull, MIT Lincoln Lab. (United States)
Robert K. Reich, MIT Lincoln Lab. (United States)
David C. Shaver, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 8033:
Advanced Photon Counting Techniques V
Mark A. Itzler; Joe C. Campbell, Editor(s)

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