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Proceedings Paper

Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy
Author(s): Yongguo Chen; Weida Hu; Xiaoshuang Chen; Jun Wang; Wei Lu
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Paper Abstract

This paper reports on the temperature-dependent extension of n-type inversion regions in HgCdTe photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multi-doped HgCdTe as the temperature decreases. Consequently hole concentration is much lower than electron concentration at 87 K. It is demonstrated that the n-type inversion region extension is caused with the p-to-n type conversion.

Paper Details

Date Published: 20 May 2011
PDF: 6 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123C (20 May 2011); doi: 10.1117/12.886663
Show Author Affiliations
Yongguo Chen, Shanghai Institute of Technical Physics (China)
Weida Hu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Jun Wang, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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