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Proceedings Paper

Theoretical study of spur-free dynamic range of a semiconductor resonant cavity linear interferometric intensity modulator
Author(s): N. Hoghooghi; P. J. Delfyett
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Paper Abstract

Simulation results of the performance of a semiconductor resonant cavity linear interferometric intensity modulator are presented. Starting from the rate equations of an injection locked semiconductor laser, the phase response and stable locking range of the injection locked semiconductor laser were obtained. Within the stable locking range without any approximation on the injection power level, effects of the alpha parameter or linewidth enhancement factor of the injection locked semiconductor slave laser, injection ratio, refractive index, and the residual amplitude modulation on the spur-free dynamic range (SFDR) of the modulator are studied.

Paper Details

Date Published: 12 May 2011
PDF: 10 pages
Proc. SPIE 8054, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications VII, 805404 (12 May 2011); doi: 10.1117/12.886390
Show Author Affiliations
N. Hoghooghi, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
P. J. Delfyett, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 8054:
Enabling Photonics Technologies for Defense, Security, and Aerospace Applications VII
Michael J. Hayduk; Peter J. Delfyett Jr., Editor(s)

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