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Proceedings Paper

Multiple gain cavity for power scaling in passively mode-locked semiconductor disk laser
Author(s): A. Rantamäki; E. J. Saarinen; J. Lyytikäinen; O. G. Okhotnikov
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Paper Abstract

The concept of multiple gain element cavity was applied for power scaling a passively mode-locked semiconductor disk laser. 400 mW of average output power for the laser with a single gain element was boosted to 900 mW for the laser with the dual gain cavity. The increase in output power was accompanied by an increase in the order of mode-locking harmonic.

Paper Details

Date Published: 22 March 2011
PDF: 5 pages
Proc. SPIE 7822, Laser Optics 2010, 782209 (22 March 2011); doi: 10.1117/12.884968
Show Author Affiliations
A. Rantamäki, Tampere Univ. of Technology (Finland)
E. J. Saarinen, Tampere Univ. of Technology (Finland)
J. Lyytikäinen, Tampere Univ. of Technology (Finland)
O. G. Okhotnikov, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 7822:
Laser Optics 2010
Nikolay N. Rosanov; Vladimir Yu. Venediktov, Editor(s)

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