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Proceedings Paper

Zero-bandgap graphene for infrared sensing applications
Author(s): King Wai Chiu Lai; Ning Xi; Hongzhi Chen; Carmen Kar Man Fung; Liangliang Chen
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Paper Abstract

Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages.

Paper Details

Date Published: 13 May 2011
PDF: 6 pages
Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80312N (13 May 2011); doi: 10.1117/12.883597
Show Author Affiliations
King Wai Chiu Lai, Michigan State Univ. (United States)
Ning Xi, Michigan State Univ. (United States)
Hongzhi Chen, Michigan State Univ. (United States)
Carmen Kar Man Fung, Michigan State Univ. (United States)
Liangliang Chen, Michigan State Univ. (United States)

Published in SPIE Proceedings Vol. 8031:
Micro- and Nanotechnology Sensors, Systems, and Applications III
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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