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Proceedings Paper

Scale down of p-n junction diodes of an uncooled IR-FPA for improvement of the sensitivity and thermal time response by 0.13-µm CMOS technology
Author(s): Ikuo Fujiwara; Keita Sasaki; Kazuhiro Suzuki; Hitoshi Yagi; Honam Kwon; Hiroto Honda; Koichi Ishii; Masako Ogata; Masaki Atsuta; Risako Ueno; Mitsuyoshi Kobayashi; Hideyuki Funaki
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Paper Abstract

We have developed an uncooled infrared radiation focal plane array (IR-FPA) with 22 μm pitch and 320 × 240 pixels utilizing silicon p-n junction diodes, which were fabricated by 0.13 μm CMOS technology and bulk-micromachining. The thermal time response of cells was lowered to be 16msec by reduction of thermal capacity of cells. In addition to increase the sensitivity of cells by extending the length of supporting beams, p-n junction diode was scaled down as small as 20% in area compared to previous one. Micro-holes were formed in the cell to reduce only thermal capacity, which were negligibly small compared to incident IR wavelength. This method needs no additional process step and is considered as suitable for low cost and mass-productive IR-FPA.

Paper Details

Date Published: 20 May 2011
PDF: 10 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121G (20 May 2011); doi: 10.1117/12.883342
Show Author Affiliations
Ikuo Fujiwara, Toshiba Corp. (Japan)
Keita Sasaki, Toshiba Corp. (Japan)
Kazuhiro Suzuki, Toshiba Corp. (Japan)
Hitoshi Yagi, Toshiba Corp. (Japan)
Honam Kwon, Toshiba Corp. (Japan)
Hiroto Honda, Toshiba Corp. (Japan)
Koichi Ishii, Toshiba Corp. (Japan)
Masako Ogata, Toshiba Corp. (Japan)
Masaki Atsuta, Toshiba Corp. (Japan)
Risako Ueno, Toshiba Corp. (Japan)
Mitsuyoshi Kobayashi, Toshiba Corp. (Japan)
Hideyuki Funaki, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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