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Proceedings Paper

Terahertz emission from semiconductors due to the lateral surface photocurrent
Author(s): P. A. Ziaziulia; V. L. Malevich; I. S. Manak
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Paper Abstract

The lateral photocurrent caused by anisotropic momentum distribution of photoelectrons in semiconductor excited by linearly polarized femtosecond laser radiation is calculated analytically and numerically with the use of particle method. We have considered three mechanisms of this effect: diffusive scattering of photoelectrons on the surface, nonparabolicity of conduction band and dependence of electron momentum relaxation time on energy. It has been shown that contributions of the lateral and normal photocurrent components to terahertz emission can be comparable.

Paper Details

Date Published: 11 January 2011
PDF: 8 pages
Proc. SPIE 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics, 799322 (11 January 2011); doi: 10.1117/12.881873
Show Author Affiliations
P. A. Ziaziulia, Belarusian State Univ. (Belarus)
V. L. Malevich, Institute of Physics (Belarus)
I. S. Manak, Belarusian State Univ. (Belarus)

Published in SPIE Proceedings Vol. 7993:
ICONO 2010: International Conference on Coherent and Nonlinear Optics
Claude Fabre; Victor Zadkov; Konstantin Drabovich, Editor(s)

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