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Proceedings Paper

LWR reduction and flow of chemically amplified resist patterns during sub-millisecond heating
Author(s): Byungki Jung; Christopher K. Ober; Michael O. Thompson; Manish Chandhok
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Paper Abstract

Chemically amplified resists are critical for sub-30 nm photolithography. As feature sizes decrease, challenges continue to arise in controlling the aerial image during exposure, acid diffusion during post exposure bakes, and swelling during development. Ultimately these processes limit the line width roughness (LWR). While there exists substantial research to modify resists and exposure protocols, post-development treatment of resist patterns to improve the LWR has received only modest attention. In this work, we use a scanned laser spike annealing system to anneal fully developed resist patterns at temperatures of 300-420oC for sub-millisecond time frames. When heated above its glass transition temperature for a controlled time, patterned resist flows to minimize the surface energy resulting in reduced roughness. While LWR and critical dimension (CD) of the resist is very sensitive to the hardbake temperature, SEM and AFM analysis show a >30% reduction in LWR with <1 nm change in CD at 26W (385oC) hardbake power compared to that of features without hardbake. Quantitative determination of surface roughness, resist trench profiles, LWR, and CD is presented and discussed.

Paper Details

Date Published: 15 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722S (15 April 2011); doi: 10.1117/12.881675
Show Author Affiliations
Byungki Jung, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)
Michael O. Thompson, Cornell Univ. (United States)
Manish Chandhok, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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