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Proceedings Paper

Spatial frequency multiplication techniques towards half-pitch 10nm patterning
Author(s): Yijian Chen; Yongmei Chen; Liyan Miao; Ping Xu; Xumou Xu; Hao Chen; Pokhui Blanco; Raymond Hung; Chris S. Ngai
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Paper Abstract

Novel patterning approaches are explored to enable either more cost-effective manufacturing solutions or a potential paradigm shift in patterning technology. First, a simplified self-aligned quadruple patterning (SAQP) process is developed to extend 193nm immersion lithography to half-pitch 10nm patterning. A detailed comparison with other SAQP schemes is made, and we find the simplified SAQP process can significantly reduce process complexity and costs. On the other hand, the topographic effect on the spacer width causes difficulty in obtaining lines with equal CD, thus a CVD/etch solution must be searched to meet the CDU requirement. Moreover, a motion-induced frequency multiplication (MIFEM) concept is proposed; and specifically, we develop a stress-induced frequency multiplication (SIFEM) technique to produce half-pitch 9nm lines/spaces with no need of ebeam, imprint, or self-assembly technology. It allows us to apply standard semiconductor fabrication processes and equipment to drive down the half pitch of a spatially periodic pattern below 10nm. The resolution of this patterning technique is dependent on the CD of spacers and their gaps regardless of optical resolution of the lithographic tool. The final space CD is mainly related with the material property of the fluid used in SIFEM process. The main issues of SIFEM process include: adjusting the fluid property to tune the gap CD, designing the anchor structures and line route to control the strength and direction of film stress, and overlay methodology development, etc.

Paper Details

Date Published: 22 March 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79731T (22 March 2011); doi: 10.1117/12.881661
Show Author Affiliations
Yijian Chen, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Ping Xu, Applied Materials, Inc. (United States)
Xumou Xu, Applied Materials, Inc. (United States)
Hao Chen, Applied Materials, Inc. (United States)
Pokhui Blanco, Applied Materials, Inc. (United States)
Raymond Hung, Applied Materials, Inc. (United States)
Chris S. Ngai, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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