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Proceedings Paper

Progress in mask replication using jet and flash imprint lithography
Author(s): Kosta S. Selinidis; Cynthia B. Brooks; Gary F. Doyle; Laura Brown; Chris Jones; Joseph Imhof; Dwayne L. LaBrake; Douglas J. Resnick; S.V. Sreenivasan
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Paper Abstract

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Paper Details

Date Published: 2 April 2011
PDF: 11 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 797009 (2 April 2011); doi: 10.1117/12.881647
Show Author Affiliations
Kosta S. Selinidis, Molecular Imprints, Inc. (United States)
Cynthia B. Brooks, Molecular Imprints, Inc. (United States)
Gary F. Doyle, Molecular Imprints, Inc. (United States)
Laura Brown, Molecular Imprints, Inc. (United States)
Chris Jones, Molecular Imprints, Inc. (United States)
Joseph Imhof, Molecular Imprints, Inc. (United States)
Dwayne L. LaBrake, Molecular Imprints, Inc. (United States)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)
S.V. Sreenivasan, Molecular Imprints, Inc. (United States)

Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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