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Proceedings Paper

Mask data correction methodology in the context of model-based fracturing and advanced mask models
Author(s): Christophe Pierrat; Larry Chau; Ingo Bork
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Paper Abstract

The current equations used for back-scattering and fogging effect corrections are reviewed in the context of model-based fracturing where shots can overlap and the dose of each shot can be set individually. A new set of equations is proposed and verified. The formulation is shown to lift some restrictions imposed by the older formulation such as the minimum shot size dimension. The new equations validate the idea to use model-based mask data preparation to correct short range and possibly mid-range mask fabrication distortions and let the mask writer correct long range and very long range effects. Using current mask writing equipment, the correction of back-scattering and fogging effects for overlapping shots can be performed accurately if the dose correction of each shot takes into account all the shots. Verification of the theory was performed using directly the modified equations to calculate the dose for each shot. The simulation of the mask image after correction perfectly overlaps the target image defined using short range and midrange simulations.

Paper Details

Date Published: 22 March 2011
PDF: 11 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732J (22 March 2011); doi: 10.1117/12.881550
Show Author Affiliations
Christophe Pierrat, IC Images Technologies, Inc. (United States)
Larry Chau, D2S, Inc. (United States)
Ingo Bork, D2S, Inc. (United States)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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