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Proceedings Paper

Out of band radiation effects on resist patterning
Author(s): Simi A. George; Patrick P. Naulleau
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Paper Abstract

Our previous work estimated the expected out-of-band (OOB) flare contribution at the wafer level assuming that there is a given amount of OOB at the collector focus. We found that the OOB effects are wavelength, resist, and pattern dependent. In this paper, results from rigorous patterning evaluation of multiple OOB-exposed resists using the SEMATECH Berkeley 0.3-NA MET are presented. A controlled amount of OOB is applied to the resist films before patterning is completed with the MET. LER and process performance above and at the resolution limit and at the resolution limits are evaluated and presented. The results typically show a negative impact on LER and process performance after the OOB exposures except in the case of one resist formulation, performance improvement was observed.

Paper Details

Date Published: 7 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796914 (7 April 2011); doi: 10.1117/12.881161
Show Author Affiliations
Simi A. George, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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