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Proceedings Paper

Stochastic exposure kinetics of EUV photoresists: a simulation study
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Paper Abstract

BACKGROUND: The stochastic nature of extreme ultraviolet (EUV) resist exposure leads to variations in the resulting acid concentration, which leads to line-edge roughness (LER) of the resulting features. METHODS: Using a stochastic resist simulator, we predicted the mean and standard deviation of the acid concentration for an open-frame exposure and fit the results to analytical expressions. RESULTS: The EUV resist exposure mechanism of the PROLTIH Stochastic Resist Simulator is first order, and an analytical expression for the exposure rate constant C allows prediction of the mean acid concentration of an open-frame exposure to about 1% accuracy over a wide range of parameter values. A second analytical expression for the standard deviation of the acid concentration also matched the output of PROLITH to within about 1%. CONCLUSIONS: Predicting the stochastic uncertainty in acid concentration for EUV resists allows optimization of resist processing and formulations, and may form the basis of a comprehensive LER model.

Paper Details

Date Published: 7 April 2011
PDF: 22 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796919 (7 April 2011); doi: 10.1117/12.881066
Show Author Affiliations
Chris A. Mack, (United States)
James W. Thackeray, Dow Advanced Materials (United States)
John J. Biafore, KLA-Tencor Corp. (United States)
Mark D. Smith, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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