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Proceedings Paper

Carrier dynamics-induced transient photoexcitation and energy deposition in femtosecond-laser irradiated GaAs
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Paper Abstract

In this work femtosecond laser photo-excitation of GaAs is studied numerically. The transient plasma densities photogenerated during the pumping IR fs-laser pulses were evaluated having in mind experimental data of time-resolved reflectivity measurements of transient bandgap shifts. Theoretical modeling employing quantum kinetic formalism based on a generalized Boltzmann-type equation, including one/multi-photon photo-excitation, Joule heating and free-carrier absorption, interband excitation, impact ionization, Auger recombination of electron-hole plasma, thermal exchange with the lattice, etc. is performed. For the first time the effect of enhancement of ionization by transient bandgap renormalization (BGR) is considered both experimentally and theoretically. The energy spectra of the electron distribution function and the time dependence of the electron density are calculated and the key role of BGR in the transient electron-hole plasma dynamics is pointed out.

Paper Details

Date Published: 15 November 2010
PDF: 6 pages
Proc. SPIE 7751, XVIII International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 77511J (15 November 2010); doi: 10.1117/12.880977
Show Author Affiliations
Tzveta Apostolova, Institute for Nuclear Research and Nuclear Energy (Bulgaria)
Andrey Ionin, P.N. Lebedev Physical Institute (Russian Federation)
Sergey Kudryashov, P.N. Lebedev Physical Institute (Russian Federation)
Leonid Seleznev, P.N. Lebedev Physical Institute (Russian Federation)
Dmitry Sinitsyn, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7751:
XVIII International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers
Tanja Dreischuh; Petar A. Atanasov; Nikola V. Sabotinov, Editor(s)

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