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Proceedings Paper

Scatterometry sensitivity for NIL process
Author(s): Takahiro Miyakawa; Kazuhiro Sato; Koichi Sentoku; Hideki Ina
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Paper Abstract

In this paper scatterometry sensitivity up to 28nm HP resin pattern and beyond by using RCWA (Rigorous Coupled Wave-analysis) simulation is described. A criterion, defined as the sum of the absolute difference of the reflectivity values between the nominal and slightly different conditions from nominal through the spectrum, is introduced. The criterion of this analysis is a kind of quantification of the sensitivity comparing with 65 nm HP resist pattern of ArF immersion lithography process.

Paper Details

Date Published: 4 April 2011
PDF: 7 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 79701N (4 April 2011);
Show Author Affiliations
Takahiro Miyakawa, Canon Inc. (Japan)
Kazuhiro Sato, Canon Inc. (Japan)
Koichi Sentoku, Canon Inc. (Japan)
Hideki Ina, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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