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Proceedings Paper

EUV masks under exposure: practical considerations
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Paper Abstract

This paper focuses on the practical side of EUV mask metrology and use. Mask metrics such as film thickness, material properties, feature profile, critical feature size, line edge/width roughness (LER/LWR) and defect levels are measured and monitored on the mask. Any variability in mask properties will be transferred to wafer print results. EUV masks have no pellicle and will be cleaned between exposures to extend use. This additional processing creates new opportunity for modifications to the mask after qualification. This paper quantifies mask variability and the induced change to printed wafer critical dimension (CD). The results are compared to the 56nm wafer pitch targets for CD and LER. This EUV-specific effort is required to determine how close EUV masks are to meeting manufacturing requirements and whether there are areas of development that require additional focus from the industry.

Paper Details

Date Published: 5 April 2011
PDF: 8 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690W (5 April 2011); doi: 10.1117/12.880755
Show Author Affiliations
Emily Gallagher, IBM Microelectronics (United States)
Gregory McIntyre, IBM Microelectronics (United States)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Sudharshanan Raghunathan, IBM Microelectronics (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Louis Kindt, IBM Microelectronics (United States)
John Whang, IBM Microelectronics (United States)
Monica Barrett, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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