Share Email Print

Proceedings Paper

Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes
Author(s): Z. Vashaei; C. Bayram; R. McClintock; M. Razeghi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Al(Ga)N/GaN resonant tunneling diodes (RTDs) are grown by metal-organic chemical vapor deposition. The effects of material quality on room temperature negative differential resistance (NDR) behaviour of RTDs are investigated by growing the RTD structure on AlN, GaN, and lateral epitaxial overgrowth GaN templates. This reveals that NDR characteristics of RTDs are very sensitive to material quality (such as surface roughness and dislocations density). The effects of the aluminum content of AlGaN double barriers (DB) and polarization fields on NDR characteristic of AlGaN/GaN RTDs were also investigated by employing low dislocation density c-plane (polar) and m-plane (nonpolar) freestanding GaN substrates. Lower aluminum content in the DB RTD active layer and minimization of dislocations and polarization fields enabled a more reliable and reproducible NDR behaviour at room temperature.

Paper Details

Date Published: 24 January 2011
PDF: 10 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451A (24 January 2011); doi: 10.1117/12.879858
Show Author Affiliations
Z. Vashaei, Northwestern Univ. (United States)
C. Bayram, Northwestern Univ. (United States)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top