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Proceedings Paper

Hotspot fixing using ILT
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Paper Abstract

For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a large layout will need this sophisticated mask design (the hotspot), with the remainder of layout being relatively simple for OPC methods to correct. In this paper we show how inverse lithography technology (ILT) can be used to correct selected regions of a large design after standard OPC has been used to correct the simple portions of the layout. The hotspot approach allows a computationally intensive ILT to be used in a limited way to correct the most difficult portions of a design. We will discuss the most important issues such as: model matching between ILT and OPC corrections; transition region corrections near the ILT and OPC boundary region; mask complexity; total combined runtime. We will show both simulated and actual wafer lithographic improvements in the hotspot regions.

Paper Details

Date Published: 22 March 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79731L (22 March 2011); doi: 10.1117/12.879781
Show Author Affiliations
Woojoo Sim, SAMSUNG Electronics (Korea, Republic of)
Sunggon Jung, SAMSUNG Electronics (Korea, Republic of)
Hyun-Jong Lee, SAMSUNG Electronics (Korea, Republic of)
Sungsoo Suh, SAMSUNG Electronics (Korea, Republic of)
Jung-Hoon Ser, SAMSUNG Electronics (Korea, Republic of)
Seong-Woon Choi, SAMSUNG Electronics (Korea, Republic of)
Chang-Jin Kang, SAMSUNG Electronics (Korea, Republic of)
Thomas Cecil, Luminescent Technologies, Inc. (United States)
Christopher Ashton, Luminescent Technologies, Inc. (United States)
David Irby, Luminescent Technologies, Inc. (United States)
Xin Zhou, Luminescent Technologies, Inc. (United States)
D.H. Son, Luminescent Technologies, Inc. (United States)
Guangming Xiao, Luminescent Technologies, Inc. (United States)
David Kim, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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