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Proceedings Paper

Development of new FIB technology for EUVL mask repair
Author(s): Fumio Aramaki; Takashi Ogawa; Osamu Matsuda; Tomokazu Kozakai; Yasuhiko Sugiyama; Hiroshi Oba; Anto Yasaka; Tsuyoshi Amano; Hiroyuki Shigemura; Osamu Suga
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Paper Abstract

The next generation EUVL masks beyond hp15nm are difficult to repair for the current repair technologies including focused ion beam (FIB) and electron beam (EB) in view of the minimum repairable size. We developed a new FIB technology to repair EUVL masks. Conventional FIB use gallium ions (Ga+) generated by a liquid metal ion source (LMIS), but the new FIB uses hydrogen ions (H2+) generated by a gas field ion source (GFIS). The minimum reaction area of H2+ FIB is theoretically much smaller than that of EB. We investigated the repair performance of H2+ FIB. In the concrete, we evaluated image resolution, scan damage, etching rate, material selectivity of etching and actinic image of repaired area. The most important result is that there was no difference between the repaired area and the non-repaired one on actinic images. That result suggests that the H2+ GFIS technology is a promising candidate for the solution to repair the next generation EUVL masks beyond hp15nm.

Paper Details

Date Published: 7 April 2011
PDF: 7 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691C (7 April 2011);
Show Author Affiliations
Fumio Aramaki, SII NanoTechnology Inc. (Japan)
Takashi Ogawa, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Hiroshi Oba, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tsuyoshi Amano, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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