
Proceedings Paper
Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone processFormat | Member Price | Non-Member Price |
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Paper Abstract
We studied the line edge structure forming in the negative tone process using meso scale simulations. Our simulation is
based on the dissipative particle dynamics (DPD) method. The simulation model of the lithographic process is developed
in which the dynamics of a polymer chain in continuous model can be observed. In the negative tone process, the cross
linking reaction is the key step to obtain the high resolution patterns. First we develop the model for the cross linking
reaction. From our results in the dissolution test of the film, as the density of cross links increases, the soluble film to the
developing liquid changed to the swelling (or insoluble) one. Once the threshold between soluble and insoluble
conditions with changing the number of cross links, we can perform two kinds of simulations; 1) layered model
simulation, and 2) line pattern simulation. In the layered model, more roughened edge can be found in the case of a thick
interface than in the case of a thin interface. Our simulations can be applicable to study the LER problem and the
dynamics of polymer chain including the chemical reaction will be one of the important origins of LER.
Paper Details
Date Published: 15 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720W (15 April 2011); doi: 10.1117/12.879587
Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720W (15 April 2011); doi: 10.1117/12.879587
Show Author Affiliations
Hiroshi Morita, National Institute of Advanced Industrial Science and Technology (Japan)
Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)
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