Proceedings Paper
Directly patterned inorganic hardmask for EUV lithography| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm
half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam
exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable
resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New
materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity,
metal-impurity content, outgassing, pattern transfer, and resist strip.
Paper Details
Date Published: 7 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796915 (7 April 2011); doi: 10.1117/12.879542
Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796915 (7 April 2011); doi: 10.1117/12.879542
Show Author Affiliations
Jason K. Stowers, Inpria Corp. (United States)
Alan Telecky, Inpria Corp. (United States)
Michael Kocsis, Inpria Corp. (United States)
Benjamin L. Clark, Inpria Corp. (United States)
Alan Telecky, Inpria Corp. (United States)
Michael Kocsis, Inpria Corp. (United States)
Benjamin L. Clark, Inpria Corp. (United States)
Douglas A. Keszler, Inpria Corp. (United States)
Andrew Grenville, Inpria Corp. (United States)
Chris N. Anderson, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Andrew Grenville, Inpria Corp. (United States)
Chris N. Anderson, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)
© SPIE. Terms of Use
