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Proceedings Paper

Directly patterned inorganic hardmask for EUV lithography
Author(s): Jason K. Stowers; Alan Telecky; Michael Kocsis; Benjamin L. Clark; Douglas A. Keszler; Andrew Grenville; Chris N. Anderson; Patrick P. Naulleau
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Paper Abstract

This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

Paper Details

Date Published: 7 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796915 (7 April 2011); doi: 10.1117/12.879542
Show Author Affiliations
Jason K. Stowers, Inpria Corp. (United States)
Alan Telecky, Inpria Corp. (United States)
Michael Kocsis, Inpria Corp. (United States)
Benjamin L. Clark, Inpria Corp. (United States)
Douglas A. Keszler, Inpria Corp. (United States)
Andrew Grenville, Inpria Corp. (United States)
Chris N. Anderson, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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